Growth and characterization of dilute nitride GaNxP1-x nanowires and GaNxP1-x/GaNyP1-y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

Abstract

We have demonstrated self-catalyzed GaNxP1-x and GaNxP1-x/GaNyP1-y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaNxP1-x nanowires was observed to be comparable to that of GaP nanowires (similar to 585 degrees C to similar to 615 degrees C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaNxP1-x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaNxP1-x/GaNyP1-y core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaNxP1-x core. (C) 2014 AIP Publishing LLC.