Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Inkjet-Printed Chemical Doping for High Performance Complementary Circuits
- Abstract
- The selective tuning of the operational mode from ambipolar to unipolar transport in organic field-effect transistors (OFETs) by printing molecular dopants is reported. The field-effect mobility (mu(FET)) and onset voltage (V-on) of both for electrons and holes in initially ambipolar methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) OFETs are precisely modulated by incorporating a small amount of cesium fluoride (CsF) n-type dopant or tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) p-type dopant for n-channel or p-channel OFETs either by blending or inkjet printing of the dopant on the pre-deposited semiconductor. Excess carriers introduced by the chemical doping compensate traps by shifting the Fermi level (E-F) toward respective transport energy levels and therefore increase the number of mobile charges electrostatically accumulated in channel at the same gate bias voltage. In particular, n-doped OFETs with CsF show gate-voltage independent Ohmic injection. Interestingly, n- or p-doped OFETs show a lower sensitivity to gate-bias stress and an improved ambient stability with respect to pristine devices. Finally, complementary inverters composed of n- and p-type PCBM OFETs are demonstrated by selective doping of the pre-deposited semiconductor via inkjet printing of the dopants.
- Author(s)
- Khim, Dongyoon; Baeg, Kang-Jun; Caironi, Mario; Liu, Chuan; Xu, Yong; Kim, Dong-Yu; Noh, Yong-Young
- Issued Date
- 2014-10
- Type
- Article
- DOI
- 10.1002/adfm.201400850
- URI
- https://scholar.gist.ac.kr/handle/local/15020
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