Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering
- Abstract
- The universal role of high-k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties. © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
- Author(s)
- Khim, Dongyoon; Xu, Yong; Baeg, Kang-Jun; Kang, Minji; Park, Won-Tae; Lee, Seung-Hoon; Kim, In-Bok; Kim, Juhwan; Kim, Dong-Yu; Liu, Chuan; Noh, Yong-Young
- Issued Date
- 2016-01
- Type
- Article
- DOI
- 10.1002/adma.201501967
- URI
- https://scholar.gist.ac.kr/handle/local/14408
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