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Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering

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Abstract
The universal role of high-k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties. © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Author(s)
Khim, DongyoonXu, YongBaeg, Kang-JunKang, MinjiPark, Won-TaeLee, Seung-HoonKim, In-BokKim, JuhwanKim, Dong-YuLiu, ChuanNoh, Yong-Young
Issued Date
2016-01
Type
Article
DOI
10.1002/adma.201501967
URI
https://scholar.gist.ac.kr/handle/local/14408
Publisher
Wiley-VCH Verlag
Citation
ADVANCED MATERIALS, v.28, no.3, pp.518 - 526
ISSN
0935-9648
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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