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Direct growth of nano-crystalline graphite films using pulsed laser deposition with in-situ monitoring based on reflection high-energy electron diffraction technique

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Author(s)
Kwak, Jeong HunLee, Sung SuLee, Hyeon JunAnoop, GopinathanLee, Hye JeongKim, Wan SikRyu, Sang-WanKim, Ha SulJo, Ji Young
Type
Article
Citation
Applied Physics Letters, v.108, no.12, pp.123107-1 - 123107-5
Issued Date
2016-03
Abstract
We report an experimental method to overcome the long processing time required for fabricating graphite films by a transfer process from a catalytic layer to a substrate, as well as our study of the growth process of graphite films using a pulsed laser deposition combined with in-situ monitoring based on reflection high-energy electron diffraction technique. We monitored the structural evolution of nano-crystalline graphite films directly grown on AlN-coated Si substrates without any catalytic layer. We found that the carbon films grown for less than 600 s cannot manifest the graphite structure due to a high defect density arising from grain boundaries; however, the carbon film can gradually become a nano-crystalline graphite film with a thickness of approximately up to 5 nm. The Raman spectra and electrical properties of carbon films indicate that the nano-crystalline graphite films can be fabricated, even at the growth temperature as low as 850 °C within 600 s. © 2016 AIP Publishing LLC.
Publisher
American Institute of Physics
ISSN
0003-6951
DOI
10.1063/1.4944845
URI
https://scholar.gist.ac.kr/handle/local/14302
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