Direct growth of nano-crystalline graphite films using pulsed laser deposition with in-situ monitoring based on reflection high-energy electron diffraction technique
- Abstract
- We report an experimental method to overcome the long processing time required for fabricating graphite films by a transfer process from a catalytic layer to a substrate, as well as our study of the growth process of graphite films using a pulsed laser deposition combined with in-situ monitoring based on reflection high-energy electron diffraction technique. We monitored the structural evolution of nano-crystalline graphite films directly grown on AlN-coated Si substrates without any catalytic layer. We found that the carbon films grown for less than 600 s cannot manifest the graphite structure due to a high defect density arising from grain boundaries; however, the carbon film can gradually become a nano-crystalline graphite film with a thickness of approximately up to 5 nm. The Raman spectra and electrical properties of carbon films indicate that the nano-crystalline graphite films can be fabricated, even at the growth temperature as low as 850 °C within 600 s. © 2016 AIP Publishing LLC.
- Author(s)
- Kwak, Jeong Hun; Lee, Sung Su; Lee, Hyeon Jun; Anoop, Gopinathan; Lee, Hye Jeong; Kim, Wan Sik; Ryu, Sang-Wan; Kim, Ha Sul; Jo, Ji Young
- Issued Date
- 2016-03
- Type
- Article
- DOI
- 10.1063/1.4944845
- URI
- https://scholar.gist.ac.kr/handle/local/14302
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