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Improvement of light extraction for a target wavelength in InGaN/GaN LEDs with an indium tin oxide dual layer by oblique angle deposition

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Abstract
GaN-based blue LEDs were fabricated and studied with porous, dense, and dual-layer indium tin oxide (ITO) structures as transparent top electrodes to enhance light extraction. The electroluminescence intensity of the LED with a thickness-optimized and refractive-index-tuned ITO dual layer at I = 20mA was higher by 19.7% than that of the conventional LED with a 200nm planar ITO. This study confirmed that an ITO dual layer can be made with a single material by optimizing the thickness and tuning the refractive index, which improves the power output without any electrical property degradation. © 2016 The Japan Society of Applied Physics.
Author(s)
Seo, Dong-JuLee, Dong-Seon
Issued Date
2016-08
Type
Article
DOI
10.7567/APEX.9.082103
URI
https://scholar.gist.ac.kr/handle/local/14155
Publisher
Institute of Physics Publishing
Citation
Applied Physics Express, v.9, no.8, pp.082103-1 - 082103-4
ISSN
1882-0778
Appears in Collections:
Department of Semiconductor Engineering > 1. Journal Articles
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