Nanoscaled In2O3:Sn films as material for thermoelectric conversion: achievements and limitations

Abstract

In this paper, thermoelectric properties of nanoscaled In2O3:Sn films are considered. The limitations that may appear during the usage of such materials in devices developed for the market of thermoelectric generators and refrigerators are also analysed. It is shown that nanoscaled In2O3:Sn is a promising material for thermoelectric applications. It is also established that insufficient thermal stability of nanostructured materials is the main limitation of these materials application in high-temperature thermoelectric converters. Optimization of grain boundary parameters and the usage of specific surrounding atmosphere can significantly improve the efficiency of thermoelectric conversion of nanostructured materials in the region of intermediate temperatures.