GIST Scholar
College of Natural Sciences
Department of Physics and Photon Science
1. Journal Articles
Depth resolved lattice-charge coupling in epitaxial BiFeO 3 thin film
- Type
- Article
- Citation
- Scientific Reports, v.6, pp.38724-1 - 38724-6
- Issued Date
- 2016-12
- Abstract
- For epitaxial films, a critical thickness (t c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t c in BiFeO 3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO 3 /SrRuO 3 /SrTiO 3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO 3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling. ©The Author(s) 2016.
- Publisher
- Nature Publishing Group
- ISSN
- 2045-2322
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