High Power Density Semiconductor-Air Batteries based on P-Type Ge with Different Crystal Orientations

Abstract

The quasi-perpetual discharge behavior of Ge anodes in semiconductor-air batteries was first demonstrated in our previous studies, marked by high anode utilization and a flat discharge profile over long-term discharge operation. In this Article, we show the crystal orientation dependence of the discharge behavior of p-type Ge anodes. In general, p-type Ge anodes at the low-index crystal indices could operate in the milliampere-scale current range and at high power densities, in stark contrast to the current-limited operation of Si-air batteries.