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Repeatable silicon nanowires transfer to flexible substrate by two-step metal assisted chemical etching

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Abstract
We reported a two-step gold (Au)-assisted chemical etching for Si nanowires (SiNWs) transfer on a flexible substrate. The first step is for making vertical SiNWs and the second step is for the fracture at the bottom of SiNWs, allowing an easy transfer of the fractured SiNWs to a receiving flexible substrate. The nanoimprint lithography (NIL) was performed to generate periodically aligned chromium (Cr) dots, which were inert to the following chemical etching step, covered with an Au film. Meanwhile, only the silicon part underneath the Au film was selectively etched, resulting in spatially isolated SiNWs at a certain pitch. Repeatable production and transferring of the SiNWs were also demonstrated. In addition, porous SiNWs were produced by additional etching with Ag nanoparticles adhered to the side wall of SiNWs for the higher surface to volume ratio. © 2017 by American Scientific Publishers All rights reserved. © 2017 by American Scientific Publishers.
Author(s)
Jeong, HuisuSong, HuiKim, Tae HeonPark, Seong WonLim, NamsooJung, Gun Young
Issued Date
2017-03
Type
Article
DOI
10.1166/sam.2017.2459
URI
https://scholar.gist.ac.kr/handle/local/13829
Publisher
American Scientific Publishers
Citation
Science of Advanced Materials, v.9, no.2, pp.184 - 187
ISSN
1947-2935
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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