GIST Scholar
College of Artificial Intelligence
Department of Semiconductor Engineering
1. Journal Articles
Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission
- Type
- Article
- Citation
- Scientific Reports, v.7
- Issued Date
- 2017-12
- Abstract
- In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective redgreen- blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530-630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.
- Publisher
- Springer Nature
- ISSN
- 2045-2322
- Appears in Collections:
- Department of Semiconductor Engineering > 1. Journal Articles
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