GIST Scholar
College of Artificial Intelligence
Department of Electrical Engineering and Computer Science
1. Journal Articles
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
- Type
- Article
- Citation
- Journal of Visualized Experiments, no.136
- Issued Date
- 2018-06
- Abstract
- Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors. © 2018, Journal of Visualized Experiments. All rights reserved.
- Publisher
- MYJoVE Corporation
- ISSN
- 1940-087X
- DOI
- 10.3791/57502
- Appears in Collections:
- Department of Electrical Engineering and Computer Science > 1. Journal Articles
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