Effect of photo-irradiation on metal insulator transition in vanadium dioxide

Abstract

We report a large transition temperature (T-C) decrease in a VO2 thin film device under photo-irradiation. With the increasing photo-irradiation intensity (P-Intensity) with a wavelength of 405 nm, the T-C of the VO2 device decreased at a rate of similar to 3.2 x 10(-2) degrees C/w/cm(2), and reached as low as 40.0 degrees C at a P-Intensity of 8.4 x 10(2) W/cm(2). While the change in T-C is primarily due to the photothermal effect when the P-Intensity is below 3.6 x 10(2) W/cm(2), both the photothermal and photo-induced carrier density effects contribute to the change in T c when the P-Intensity is above 6.4 x 10(2) W/cm(2) . Published by AIP Publishing.