Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

Abstract

High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm(2) and low specific resistivity of 1.46 x 10(-4) Omega.cm(2). However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications. (C) 2018 The Japan Society of Applied Physics