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Nanoscale heat transport through the hetero-interface of SrRuO3 thin films

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Author(s)
Jeong, D. G.; Ju, H., I; Choi, Y. G.; Roh, C. J.; Woo, S.; Choi, W. S.; Lee, J. S.
Type
Article
Citation
NANOTECHNOLOGY, v.30, no.37
Issued Date
2019-09
Abstract
A SrRuO3 thin film has been widely used as a metal electrode in electronic devices based on transition metal oxides, and hence it is important to understand its thermal transport properties to minimize a thermal degradation problem during the device operation. Using the time-domain thermoreflectance measurement technique, we investigate the cross-plane thermal conductivity of the SrRuO3 thin films with a thickness variation from 1 mu m to 8 nm. We find that the thermal conductivity is reduced from about 6 W m(-1) K-1 for the 1 mu m thick film to about 1.2 W m(-1) K-1 for the 8 nm thick film, and attribute this behavior to the boundary scattering of thermal carriers which originally have the mean free path of about 20 nm in a bulk state. Also, we observe a clear dip behavior of the thermal conductivity in the intermediate thickness around 30 nm which suggests an existence of a strong scattering source other than the film boundary. We explain this result by considering an additional interfacial scattering at the tetragonal-orthorhombic phase boundary which is formed during the strain relaxation with an increase of the film thickness.
Publisher
IOP PUBLISHING LTD
ISSN
0957-4484
DOI
10.1088/1361-6528/ab280d
URI
https://scholar.gist.ac.kr/handle/local/12572
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