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Photoresponses of the back-side illuminated GaAs photoconductive semiconductor switches in the linear mode

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Abstract
Photoresponses of the back-side illuminated photoconductive semiconductor switches (PCSSs) in the linear mode are studied. It has been found that the back-side-illuminated PCSS enjoys the better performance than that of the front-side-illuminated one. Photogeneration of electron-hole pairs beneath the contacts under the back-side illumination condition significantly reduces the resistance of the PCSS leading to the higher output pulse amplitude up to 4.6 times. Impact of the beam center position on the output waveform is also investigated for both the illumination cases. The laser beam centered near the cathode yields the slowly-decaying output pulse waveform. On the other hand, the rapidly-decaying waveform is observed with the beam centered near the anode. © 2019 Elsevier Ltd
Author(s)
Kim, Yong PyoChoi, Pyeung HwiKim, Min-SeongRyu, JiheonBaek,Sung-hyunHong, Sung-MinLee, SungbaeJang, Jae-Hyung
Issued Date
2020-02
Type
Article
DOI
10.1016/j.sse.2019.107680
URI
https://scholar.gist.ac.kr/handle/local/12367
Publisher
Pergamon Press Ltd.
Citation
Solid-State Electronics, v.164
ISSN
0038-1101
Appears in Collections:
Department of Physics and Photon Science > 1. Journal Articles
Department of Electrical Engineering and Computer Science > 1. Journal Articles
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