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Deep-ultraviolet sensing characteristics of transparent and flexible IGZO thin film transistors

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Abstract
Recently, deep-ultraviolet (DUV) photodetectors with useful functions including transparency and flexibility have been developed for a real-time environmental monitoring, a wearable monitoring system, transparent wireless communication, and a smart window system. In this study, we investigate the DUV sensing characteristics of transparent and flexible IGZO thin-film transistors (TFTs) fabricated by a dry transfer printing, which is a very promising technique affording the device fabrication on unconventional surfaces. The fabricated TFT devices show high mechanical stability even at a bending radius of 1.4 mm, and the repeatable and gate bias-dependent DUV photoresponse characteristics. The gate bias-dependent photocurrent (Iph) decay characteristics are likely attributed to the different surface re-adsorption rates of oxygen molecules depending on the gate bias polarity, which are qualitatively described based on energy band diagrams. In addition, the wavelength-dependent photoresponse characteristics of the IGZO TFT device upon UV illumination with λ = 245 nm show a 10 times faster Iph decay behavior than that upon UV illumination with λ = 365 nm. The result implies that the dissociative oxygen arising from the DUV illumination could accelerate the Iph decay due to the increased surface adsorption. © 2019 Elsevier B.V.
Author(s)
Yoon, JongwonBae,Ga-YoungYoo, SeonggwangYoo, Jung IlYou,Nam-HoHong, Woong-KiKo, Heung Cho
Issued Date
2020-03
Type
Article
DOI
10.1016/j.jallcom.2019.152788
URI
https://scholar.gist.ac.kr/handle/local/12313
Publisher
Elsevier BV
Citation
Journal of Alloys and Compounds, v.817
ISSN
0925-8388
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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