Strong and narrowband terahertz radiation fromGaAsbasedpHEMTand terahertz imaging

Abstract

Strong and narrowband terahertz (THz) radiation is obtained from a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is measured to be 63 and 278 mu W at room temperature and 77 K, respectively. By using the THz radiation from the pHEMT, a metal object hidden in cloth was successfully imaged.