Strong and narrowband terahertz radiation fromGaAsbasedpHEMTand terahertz imaging
- Author(s)
- Kim, Se-Mi; Hong, Sung-Min; Jang, Jae-Hyung
- Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.62, no.12, pp.3791 - 3795
- Issued Date
- 2020-07
- Abstract
- Strong and narrowband terahertz (THz) radiation is obtained from a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is measured to be 63 and 278 mu W at room temperature and 77 K, respectively. By using the THz radiation from the pHEMT, a metal object hidden in cloth was successfully imaged.
- Publisher
- John Wiley & Sons Inc.
- ISSN
- 0895-2477
- DOI
- 10.1002/mop.32525
- URI
- https://scholar.gist.ac.kr/handle/local/12076
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