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Strong and narrowband terahertz radiation fromGaAsbasedpHEMTand terahertz imaging

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Author(s)
Kim, Se-MiHong, Sung-MinJang, Jae-Hyung
Type
Article
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.62, no.12, pp.3791 - 3795
Issued Date
2020-07
Abstract
Strong and narrowband terahertz (THz) radiation is obtained from a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is measured to be 63 and 278 mu W at room temperature and 77 K, respectively. By using the THz radiation from the pHEMT, a metal object hidden in cloth was successfully imaged.
Publisher
John Wiley & Sons Inc.
ISSN
0895-2477
DOI
10.1002/mop.32525
URI
https://scholar.gist.ac.kr/handle/local/12076
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