GIST Scholar
College of Engineering
Department of Materials Science and Engineering
1. Journal Articles
Effect of annealing temperature on switching properties in Si-doped HfO2 films
- Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, v.129, no.16
- Issued Date
- 2021-04
- Abstract
- The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polarization switching kinetics is essential for both scientific and technological purposes. Polarization switching is analyzed based on the nucleation-limited switching model with a Lorentzian distribution of logarithmic switching times. The activation field governing the switching kinetics is explained by a dependence on the density of oxygen vacancies, which are caused by various annealing temperatures. This indicates that oxygen vacancies can be a dominant factor in the polarization switching of Si-doped HfO2 films.
- Publisher
- AIP Publishing
- ISSN
- 0021-8979
- Appears in Collections:
- Department of Materials Science and Engineering > 1. Journal Articles
- Files in This Item:
-
-
There are no files associated with this item.
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.