Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections

Abstract

A universal equation for the charge-voltage characteristics in the multigate metal oxide semiconductor (MOS) structure with an arbitrary cross section is presented. A generalized coordinate is proposed and the Poisson equation is integrated with a weighting factor related with the generalized coordinate and the electric field. A compact charge model is derived and analytic and numerical examples for various MOS structures are shown.