Optimization of Nitrogen Ion Implantation Condition for beta-Ga2O3 Vertical MOSFETs via Process and Device Simulation

Abstract

In this work, nitrogen implantation conditions for a vertical beta-Ga2O3 MOSFET with a planar gate have been optimized to maximize the power figure of merit (PFOM) by performing extensive 2-D process and device technology computer-aided design (TCAD) simulations. The nitrogen implantation process conditions are optimized as the implantation energy of 300 keV and the maximum concentration of 1.1x10(19) cm(-3). With the optimized conditions, the device realizes the enhancement-mode (E-mode) operation with the threshold voltage of 3.84 V. The PFOM is optimized as 88.7 MW/cm(2) with the ON-resistance of 43.8 m/cm(2) and the breakdown voltage of 1963 V.