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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

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Author(s)
Song, Min-KyuKang, Ji-HoonZhang, XinyuanJi, WonjaeAscoli, AlonMessaris, IoannisDemirkol, Ahmet SamilDong, BoweiAggarwal, SamarthWan, WeierHong, Seok-ManCardwell, Suma GeorgeBoybat, IremSeo, Jae-SunLee, Jang-SikLanza, MarioYeon, HanwoolOnen, MuratLi, JuYildiz, Bilgedel Alamo, Jesús A.Kim, SeyoungChoi, ShinhyunMilano, GianlucaRicciardi, CarloAlff, LambertChai, YangWang, ZhongruiBhaskaran, HarishHersam, Mark C.Strukov, DmitriWong, H.-S. PhilipValov, IliaGao, BinWu, HuaqiangTetzlaff, RonaldSebastian, AbuLu, WeiChua, LeonYang, J. JoshuaKim, Jeehwan
Type
Article
Citation
ACS Nano, v.17, no.13, pp.11994 - 12039
Issued Date
2023-06
Abstract
Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field. © 2023 American Chemical Society.
Publisher
American Chemical Society
ISSN
1936-0851
DOI
10.1021/acsnano.3c03505
URI
https://scholar.gist.ac.kr/handle/local/10151
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