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    <link>https://scholar.gist.ac.kr/handle/local/7921</link>
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    <pubDate>Mon, 08 Dec 2025 07:47:35 GMT</pubDate>
    <dc:date>2025-12-08T07:47:35Z</dc:date>
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      <title>나노 단위의 압전전기장 조절을 통한 테라파 발진과 주파수 조절</title>
      <link>https://scholar.gist.ac.kr/handle/local/25158</link>
      <description>Title: 나노 단위의 압전전기장 조절을 통한 테라파 발진과 주파수 조절
Author(s): 정훈일; 정지훈; 이동선; C. J. Stanton; 조영달</description>
      <pubDate>Thu, 21 Jan 2010 15:00:00 GMT</pubDate>
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      <dc:date>2010-01-21T15:00:00Z</dc:date>
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      <title>Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation</title>
      <link>https://scholar.gist.ac.kr/handle/local/25554</link>
      <description>Title: Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation
Author(s): Chae, SJ; Gunes, F; Kim, KK; Kim, ES; Han, GH; Kim, SM; Shin, HJ; Yoon, SM; Choi, JY; Park, MH; Yang, CW; Pribat, D; Lee, YH
Abstract: Large-area, few-layer graphene is grown on a poly-nickel substrate using optimized CVD conditions. High temperature, short growth time, and an optimal gas mixing ratio (C2H2/H-2 = 2/45) are found to be necessary to synthesize highly crystalline few-layer grapheme, which may find applications in electronic devices. The wrinkles that are observed under all growth conditions are proposed to be formed by two processes.</description>
      <pubDate>Tue, 04 Aug 2009 15:00:00 GMT</pubDate>
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      <dc:date>2009-08-04T15:00:00Z</dc:date>
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      <title>Synthesis of large-area graphene layers on nickel film by chemical vapor deposition: Wrinkle formation</title>
      <link>https://scholar.gist.ac.kr/handle/local/25552</link>
      <description>Title: Synthesis of large-area graphene layers on nickel film by chemical vapor deposition: Wrinkle formation
Author(s): Chae, Seung Jin; Günes, Fethullah; Kim, Ki Kang; Kim, Eun Sung; Han, Gang Hee; Kim, Soo Min; Shin, Hyeon-Jin; Yoon, Seon-Mi; Choi, Jae-Young; Park, Min Ho; Yang, Cheol Woong; Pribat, Didier; Lee, Young Hee
Abstract: Highly crystalline few-graphene layers were synthesized on poly-nickel, Ni(111) and Ni-deposited substrates by optimizing the mixing ratio of C</description>
      <pubDate>Wed, 05 Aug 2009 15:00:00 GMT</pubDate>
      <guid isPermaLink="false">https://scholar.gist.ac.kr/handle/local/25552</guid>
      <dc:date>2009-08-05T15:00:00Z</dc:date>
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      <title>Strong Fermi-Level Pinning at Metal/Si(001) Interface Ensured by Forming Abrupt Schottky Junction with Graphene Insertion Layer</title>
      <link>https://scholar.gist.ac.kr/handle/local/21426</link>
      <description>Title: Strong Fermi-Level Pinning at Metal/Si(001) Interface Ensured by Forming Abrupt Schottky Junction with Graphene Insertion Layer
Author(s): Yoon, Hoon Hahn</description>
      <pubDate>Tue, 21 Apr 2015 15:00:00 GMT</pubDate>
      <guid isPermaLink="false">https://scholar.gist.ac.kr/handle/local/21426</guid>
      <dc:date>2015-04-21T15:00:00Z</dc:date>
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