Repository Collection: https://scholar.gist.ac.kr/handle/local/7921 2025-12-08T07:47:35Z 2025-12-08T07:47:35Z 나노 단위의 압전전기장 조절을 통한 테라파 발진과 주파수 조절 정훈일 정지훈 이동선 C. J. Stanton 조영달 https://scholar.gist.ac.kr/handle/local/25158 2025-07-02T06:35:28Z 2010-01-21T15:00:00Z Title: 나노 단위의 압전전기장 조절을 통한 테라파 발진과 주파수 조절 Author(s): 정훈일; 정지훈; 이동선; C. J. Stanton; 조영달 2010-01-21T15:00:00Z Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation Chae, SJ Gunes, F Kim, KK Kim, ES Han, GH Kim, SM Shin, HJ Yoon, SM Choi, JY Park, MH Yang, CW Pribat, D Lee, YH https://scholar.gist.ac.kr/handle/local/25554 2025-07-02T06:38:04Z 2009-08-04T15:00:00Z Title: Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation Author(s): Chae, SJ; Gunes, F; Kim, KK; Kim, ES; Han, GH; Kim, SM; Shin, HJ; Yoon, SM; Choi, JY; Park, MH; Yang, CW; Pribat, D; Lee, YH Abstract: Large-area, few-layer graphene is grown on a poly-nickel substrate using optimized CVD conditions. High temperature, short growth time, and an optimal gas mixing ratio (C2H2/H-2 = 2/45) are found to be necessary to synthesize highly crystalline few-layer grapheme, which may find applications in electronic devices. The wrinkles that are observed under all growth conditions are proposed to be formed by two processes. 2009-08-04T15:00:00Z Synthesis of large-area graphene layers on nickel film by chemical vapor deposition: Wrinkle formation Chae, Seung Jin Günes, Fethullah Kim, Ki Kang Kim, Eun Sung Han, Gang Hee Kim, Soo Min Shin, Hyeon-Jin Yoon, Seon-Mi Choi, Jae-Young Park, Min Ho Yang, Cheol Woong Pribat, Didier Lee, Young Hee https://scholar.gist.ac.kr/handle/local/25552 2025-07-02T06:38:03Z 2009-08-05T15:00:00Z Title: Synthesis of large-area graphene layers on nickel film by chemical vapor deposition: Wrinkle formation Author(s): Chae, Seung Jin; Günes, Fethullah; Kim, Ki Kang; Kim, Eun Sung; Han, Gang Hee; Kim, Soo Min; Shin, Hyeon-Jin; Yoon, Seon-Mi; Choi, Jae-Young; Park, Min Ho; Yang, Cheol Woong; Pribat, Didier; Lee, Young Hee Abstract: Highly crystalline few-graphene layers were synthesized on poly-nickel, Ni(111) and Ni-deposited substrates by optimizing the mixing ratio of C 2009-08-05T15:00:00Z Strong Fermi-Level Pinning at Metal/Si(001) Interface Ensured by Forming Abrupt Schottky Junction with Graphene Insertion Layer Yoon, Hoon Hahn https://scholar.gist.ac.kr/handle/local/21426 2025-07-02T03:36:36Z 2015-04-21T15:00:00Z Title: Strong Fermi-Level Pinning at Metal/Si(001) Interface Ensured by Forming Abrupt Schottky Junction with Graphene Insertion Layer Author(s): Yoon, Hoon Hahn 2015-04-21T15:00:00Z